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The epitaxial growth conditions and superconducting properties of nanostructured devices made of rhenium (superconducting below T=1.7 K) on sapphire were explored. Epitaxial growth of rhenium thin films onto a single crystal ↵-Al2O3 substrate was realised using molecular beam epitaxy. The pressure in the MBE chamber was in the range of 10−10 Torr. The cleanness of the substrate was verified using XPS, and the growth of rhenium was monitored using RHEED.
Contact : Kitti Ratter
Klaus Hasselbach(Institut Néel, CNRS/UGA)
Bruno Gilles (SIMAP, Grenoble INP/UGA/CNRS)
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